| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for making an integrated circuit with a small feature size. SOLUTION: The method for making an integrated circuit includes formation of an aluminum layer close to a semiconductor wafer, and formation of a photo- resist layer close to the aluminum layer at least a part of it is not covered by the photo-resist layer. The method exposes the photo-resist layer to a pattern image, develops the photo-resist being exposed by using a developer, eliminates a part of the photo-resist not being exposed, and specifies a mask that includes the mask feature with a narrower width than the width of features being processed by another method. The narrow width is a result of the interaction among the photo-resist, the developer, and aluminum. The method etches the aluminum layer using the mask and can specify the circuit feature, the critical dimension of which is smaller than that of the feature being processed by another method. |
