METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve the operating characteristic and the yield rate of the semiconductor device by preventing a tungsten layer from being oxidized. CONSTITUTION: A gate insulating layer(103) is formed on an upper portion of a semiconductor substrate(100). An undoped polycrystalline silicon layer pattern having a gate electrode shape is formed on the gate insulating layer(103) and an oxide layer(105a) is formed on the entire surface of the structure. After forming an LDD area on both sides of the undoped polycrystalline silicon layer pattern, a nitride layer(108a) is formed on the entire surface of the structure. A spacer is formed at a sidewall of the undoped polycrystalline silicon layer pattern by etching the nitride layer and the oxide layer. A source/drain area(110a) is formed by implanting a high-density impurity into both sides of the spacer. After forming an interlayer dielectric(111) on the entire surface of the structure, a planar process is carried out. A recess is formed by removing the undoped polycrystalline silicon layer pattern by a predetermined thickness. After sequentially forming an anti-diffusion layer(113b) and a metal layer(114a) on the entire surface of the structure, an upper portion of the recess is exposed by removing the anti-diffusion layer(113b) and the metal layer(114a). Then, a mask insulating layer pattern(115) is formed for filling the upper portion of the recess.