| 摘要 |
PURPOSE: A method for manufacturing a bit line of a semiconductor device is provided to prevent impurity residue and irregular reflection during exposure by accumulating HTO oxide layer on bit line contact. CONSTITUTION: At first, a landing plug poly(10) is formed on lower portion of a semiconductor substrate, a dielectric oxide film(20) is formed and a bit line contact is opened by using exposing and etching processes. And then, a poly silicon layer(30) and a tungsten silicide layer(40) are vaporized sequentially on a front surface of the result of the preceding steps. At third, HTO oxide layer(50), mask nitride layer(60) and a reflection protection layer are formed sequentially on the surface of the tungsten silicide layer. Then, a bit line pattern is defined by using exposure after forming the reflection protection layer and etched to form a bit line(80). The thickness of the dielectric oxide film is less then 1500 angstrom.
|
