| 摘要 |
PURPOSE: A method for forming a metal line of a semiconductor device is provided to remove fully the remaining photoresist layer and the remaining polymer in a post-etch cleaning process by performing an in-situ dry cleaning process to remove a polymer and using a wet chemical to remove the photoresist from an inside of the polymer. CONSTITUTION: A nitride layer(3) is formed on a lower metal layer(1). The first organic insulating layer(5), an etching barrier oxide layer(7), the second organic insulating layer(9), an oxide layer as a hard mask layer, and an organic anti-reflective layer are formed on the nitride layer(3). A photoresist layer is applied on the whole structure. A via mask pattern is formed by patterning the photoresist layer. A via hole is formed by etching the organic anti-reflective layer, the oxide layer(11), the second organic insulating layer(9), the etching barrier oxide layer(7), and the first organic insulating layer(5). A trench mask pattern is formed by applying and patterning the photoresist.
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