METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve the characteristic and the reliability of the semiconductor device by enhancing the negative input lowest low characteristic. CONSTITUTION: A diode transistor is provided. The diode transistor moves electrons through a Vss power line when a Vssq power line is turned on in the Vss power line. The Vssq power line is connected to a gate and a drain of the transistor. The Vss power line is connected to a bulk terminal and a source of the transistor. In order to improve the negative input lowest low characteristic, a buried p+ area(33) is formed by implanting p+ impurities into a p well(30). At this time, the buried p+ area(33) is spaced from a depletion area formed at a lower portion of the source/drain area so as to prevent the junction capacitance from increasing.