发明名称 POLYMER FOR DIFFUSED REFLECTION-PREVENTIVE FILM AND PRODUCTION METHOD
摘要 PURPOSE: A polymer for diffused reflection-preventive film and a production method are be employed for ultra fine pattern formation using 193nm ArF and 248nm KrF light in process of semiconductor device production, contain high absorbance chromophoric group for absorbance on 193 nm and 248 nm wavelength for removing standing wave in thickness change of their own light and photosensitive film, have a good solubility on every hydrocarbon-based solvent and have solubility resistance against some solvent in the time of hard bake. CONSTITUTION: The polymer is represented by formula R10 and R11 are C1-10 alkyl group at which each branched or main chain is substituted, and R12 are hydrogen or methyl group. After acrolein or meta-acrolein is dissolved in organic solvent and polymerization initiator is added and polymerized. The result materials are reacted with the C1-10 alcohol to obtain the compound represented by formula.
申请公布号 KR20010057924(A) 申请公布日期 2001.07.05
申请号 KR19990061343 申请日期 1999.12.23
申请人 HYNIX SEMICONDUCTOR INC. 发明人 BAEK, GI HO;HONG, SEONG EUN;JUNG, JAE CHANG;JUNG, MIN HO;LEE, GEUN SU
分类号 G03F7/11;C08F2/14;C08F4/32;C08F8/00;C08F8/02;C08F16/34;C08F220/30;C08K5/00;C08L33/04;C09D5/00;C09D129/00;G03F7/039;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/11
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