PLASMA PROCESSING METHODS

摘要

A workpiece is treated in a vacuum chamber by a plasma struck by capacitative or inductive coupling of RF power. RF power is also supplied to an electrode supporting the workpiece at a high frequency well in excess of 13.56 MHz for all or part of the processing stage in order to control the ion energy distribution. Ideally the high frequency energy applied to the electrode will cause the energy distribution to peak around a single energy.