| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to form a device having a small contact and a reduced contact leakage, by forming a Ti/TiN layer in an active contact region to basically improve active loss. CONSTITUTION: A metal buffer layer is applied on the entire surface of a silicon substrate(1) having a bulk transistor. The metal buffer layer between the bulk transistors is patterned to form a local buffer layer. An interpoly oxide and boron phosphorous silicate glass(BPSG) layer(5) is formed on the resultant structure. The interpoly oxide and BPSG layer is partially etched to be lower than the gate of the bulk transistor. The metal buffer layer exposed to the outside of the etched interpoly oxide and BPSG layer is blanket-etched. An interpoly oxide layer is deposited on the resultant structure. After a poly 2 contact(7) exposing the metal buffer layer is formed in a poly 1(2) which is a gate of the bulk transistor, an inner connection layer(6) of a uniform thickness is formed on the resultant structure. A poly patterning process is performed regarding the resultant structure, and a subsequent process is carried out.
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