| 摘要 |
PURPOSE: A manufacturing process of a semiconductor device for reducing particles is provided to reduce the generation of particles by omitting a pre-deposition process and performing a cleaning process. CONSTITUTION: A thermal processing for a multitude of wafer is performed within a furnace. The multitude of wafer is removed from the furnace. A cleaning process for the furnace is performed to clean the inside of the furnace. An internal temperature of the furnace is controlled. The Generation State of particles is tested. The thermal processing is performed under a temperature more than 760 degrees centigrade. In the cleaning process, a mixed solution of fluorine acid and pure water is used as a cleaning solution.
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