METHOD OF MANUFACTURING SRAM DEVICE FOR PREVENTING DIFFUSION OF DOPANT BETWEEN DUAL GATE ELECTRODES

摘要

PURPOSE: A method for manufacturing an SRAM device for preventing diffusion of dopant between dual gate electrodes is provided to prevent diffusion of dopant by connecting a metal plug with an adjacent dual gate electrode. CONSTITUTION: A gate insulating layer(51) and a polysilicon layer are formed on a semiconductor substrate(50) having an NMOS region and a PMOS region. An N type polysilicon layer and a P type polysilicon layer are formed by implanting high-density P type dopant ions and high-density N type dopant ions into the polysilicon layer of the NMOS region and the polysilicon layer of the PMOS region. A single gate electrode or a dual gate electrode of an NMOS gate electrode and a PMOS gate electrode is formed by patterning the N type polysilicon layer and the P type polysilicon layer. An interlayer dielectric(53) is deposited on the semiconductor substrate(50). The interlayer dielectric(53) is flattened by performing thermal processing. A contact hole is formed to expose the NMOS gate electrode and the PMOS gate electrode by performing a lithography process. A metal plug(54) is formed to bury the contact hole.