| 摘要 |
PURPOSE: A plasma deposition system of a semiconductor device is provided to form a metal line of a semiconductor device by using an ion metal plasma sputtering method. CONSTITUTION: An ionization chamber(10) ionizes target metal atoms excited from a target metal(11) and atoms of an exciting metal by colliding the exciting metal against the target metal(11). A deposition chamber(20) receives only ions of the target metal and deposits a metal line layer on a wafer. One end of an ion path(30) is connected with the ionization chamber(10). The other end of the ion path(30) is divided into two lines(31,32). Two lines(31,32) are connected with the deposition chamber(20) and the ionization chamber(10), respectively. The divided lines(31,32) are connected selectively with the deposition chamber(20) or the ionization chamber(10) according to a mass of the target metal(11) and a mass of the exciting metal.
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