发明名称 |
Method for making polycrystalline thin film and associated oxide superconductor and apparatus therefor |
摘要 |
A method is presented for making a polycrystalline thin film (B) by depositing particles emitted from a target (36) on a substrate base (A) to form the film (B) constituted by the target material while concurrently irradiating the depositing particles with an ion beam generated by an ion source (39) at an angle of incidence, in a range of 50 to 60 degrees to a normal (H) to a film surface, and maintaining a film temperature at less than 300 degrees Celsius. This method is effective in producing an excellent alignment of crystal axes of the grains in the film when the film thickness exceeds 200 nm. The target material includes yttrium-stabilized zirconia but other material can also be used. A layer (C) of a superconducting substance formed on top of the polycrystalline thin film (B) produces a superconducting film (22) exhibiting excellent superconducting properties.
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申请公布号 |
US2001006042(A1) |
申请公布日期 |
2001.07.05 |
申请号 |
US20010784209 |
申请日期 |
2001.02.16 |
申请人 |
FUJIKURA LTD. |
发明人 |
IIJIMA YASUHIRO;HOSAKA MARIKO;TANABE NOBUO;SADAKATA NOBUYUKI;SAITOH TAKASHI |
分类号 |
C23C14/08;C23C14/22;C23C14/46;H01L39/24;(IPC1-7):C23C16/00 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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