发明名称 CARBON-CONTAINING ALUMINUM NITRIDE SINTERED COMPACT, AND CERAMIC SUBSTRATE FOR USE IN APPARATUS FOR MANUFACTURING AND INSPECTING SEMICONDUCTOR
摘要 <p>A carbon-containing aluminum nitride sintered compact comprising an aluminum nitride matrix and, incorporated therein, a carbon which has peaks appearing in the vicinity of 1580 cm-1 and 1355 cm-1 as measured by the laser Raman spectrometry. The carbon-containing aluminum nitride sintered compact does not suffer from a short circuit due to its satisfactorily high volume resistivity of at least 1 x 108 Φ • cm in a high temperature region of 200 °C or higher (for example, 500 °C or so), is excellent in hiding properties, is increased with respect to radiant heat and can secure high accuracy in the measurement by a surface thermometer.</p>
申请公布号 WO2001047831(P1) 申请公布日期 2001.07.05
申请号 JP2000002165 申请日期 2000.04.04
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