发明名称 |
Slurry for chemical mechanical polishing |
摘要 |
The present invention relates to a slurry used for chemical mechanical polishing of a substrate having a copper-containing film at the surface, which slurry contains an abrasive, an oxidizing agent, and an adhesion-inhibitor preventing adhesion of a polishing product to a polishing pad. With the polishing slurry of the present invention, even when the copper-containing metal film to be polished has a large thickness or a large area and therefore the amount of the copper-containing metal to be polished is large, adhesion of polishing product to a polishing pad is suppressed and CMP can be completed satisfactorily in a single polishing operation without discontinuation. |
申请公布号 |
US2001006225(A1) |
申请公布日期 |
2001.07.05 |
申请号 |
US20000745102 |
申请日期 |
2000.12.22 |
申请人 |
TSUCHIYA YASUAKI;WAKE TOMOKO;ITAKURA TETSUYUKI;SAKURAI SHIN;AOYAGI KENICHI |
发明人 |
TSUCHIYA YASUAKI;WAKE TOMOKO;ITAKURA TETSUYUKI;SAKURAI SHIN;AOYAGI KENICHI |
分类号 |
B24B37/00;C09G1/02;C09K3/14;H01L21/304;H01L21/308;H01L21/321;H01L21/768;(IPC1-7):C09K5/00 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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