发明名称 Slurry for chemical mechanical polishing
摘要 The present invention relates to a slurry used for chemical mechanical polishing of a substrate having a copper-containing film at the surface, which slurry contains an abrasive, an oxidizing agent, and an adhesion-inhibitor preventing adhesion of a polishing product to a polishing pad. With the polishing slurry of the present invention, even when the copper-containing metal film to be polished has a large thickness or a large area and therefore the amount of the copper-containing metal to be polished is large, adhesion of polishing product to a polishing pad is suppressed and CMP can be completed satisfactorily in a single polishing operation without discontinuation.
申请公布号 US2001006225(A1) 申请公布日期 2001.07.05
申请号 US20000745102 申请日期 2000.12.22
申请人 TSUCHIYA YASUAKI;WAKE TOMOKO;ITAKURA TETSUYUKI;SAKURAI SHIN;AOYAGI KENICHI 发明人 TSUCHIYA YASUAKI;WAKE TOMOKO;ITAKURA TETSUYUKI;SAKURAI SHIN;AOYAGI KENICHI
分类号 B24B37/00;C09G1/02;C09K3/14;H01L21/304;H01L21/308;H01L21/321;H01L21/768;(IPC1-7):C09K5/00 主分类号 B24B37/00
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