METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to form a gate electrode by performing a damascene process using a dummy layer. CONSTITUTION: A photoresist pattern is formed on a gate electrode formation portion of a semiconductor substrate(31). A dielectric layer(33) is formed on a whole face of the structure. The photoresist layer and the dielectric layer(33) are etched to expose the semiconductor substrate(31). A gate insulating layer and a metal layer are formed on the dielectric layer(33) and the exposed substrate. A gate electrode is formed by etching back the metal layer and the gate insulating layer. The dielectric layer(33) is removed.