发明名称 MONITORING METHOD OF OVERLAY MEASURING EQUIPMENT
摘要 PURPOSE: A monitoring method of overlay measuring equipment is to provide a precise overlay precision, by comparing an overlay precision in an x-axis direction with an overlay precision in a y-axis direction. CONSTITUTION: A wafer(20) having an overlay pattern is inserted into wafer measuring equipment to measure overlay precision. The wafer is loaded at a zero degree, and an overlay precision is measured in a right/left direction and in a vertical direction. The wafer is loaded at 90 or 270 degrees, and an overlay precision is measured in a right/left direction and in a vertical direction. The overlay precision in a right/left direction is compared with the overlayer precision in a vertical direction.
申请公布号 KR20010058323(A) 申请公布日期 2001.07.05
申请号 KR19990062577 申请日期 1999.12.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YOO, TAE JUN
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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