Semiconductor laser device, semiconductor laser array device and optical fiber transmission system

摘要

An object of the technique of the present invention disclosed is to provide semiconductor laser devices and semiconductor laser array devices that can ensure high-precision oscillation wavelengths. Another object of the present invention is to provide semiconductor laser devices and semiconductor laser array devices that are less affected by the atmospheric temperature while ensuring high-precision oscillation wavelengths. In order to achieve the above objects, a semiconductor laser device according to the present invention comprises a semiconductor substrate; a first cladding region on the semiconductor substrate side; an active layer region; a second cladding region disposed on a side opposite from the semiconductor substrate with the active layer region intermediate between the semiconductor substrate and the second cladding region; a first semiconductor region on either side of the active layer region in parallel with a traveling direction of light in the active layer region, the first semiconductor region having an electric resistance higher than that of the active layer region and a refractive index higher than that of the semiconductor substrate; an insulative or semi-insulative second semiconductor region formed between the first semiconductor region and part of the second cladding region; and a first electrode and a second electrode for injecting a current into the active layer region. A semiconductor laser device includes a semiconductor substrate, a first cladding region on one side of the semiconductor substrate, an active layer region, and a second cladding region disposed on an opposite side of the semiconductor substrate. The active layer region is disposed between the semiconductor substrate and the second cladding region. A first semiconductor region is provided on either side of the active layer region in parallel with a traveling direction of light in the active layer region and has an electric resistance higher than that of the active layer region and a refractive index high than that of the semiconductor substrate. An insulative or semi-insulative second semiconductor region is formed between the first semiconductor region and part of the second cladding region. A first electrode and a second electrode are provided injecting a current into the active layer region.