发明名称 |
Method of forming titanium silicide and titanium by chemical vapor deposition and resulting apparatus |
摘要 |
A method is provided for forming a contact in an integrated circuit by chemical vapor deposition (CVD). In one embodiment, a titanium precursor and a silicon precursor are contacted in the presence of hydrogen, to form titanium silicide. In another embodiment, a titanium precursor contacts silicon to form to form titanium silicide.
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申请公布号 |
US2001006240(A1) |
申请公布日期 |
2001.07.05 |
申请号 |
US20010789999 |
申请日期 |
2001.02.21 |
申请人 |
MICRON TECHNOLOGY INC. |
发明人 |
DOAN TRUNG T.;SANDHU GURTEJ SINGH;PRALL KIRK;SHARAN SUJIT |
分类号 |
C23C16/02;C23C16/14;C23C16/42;H01L21/28;H01L21/285;H01L21/768;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
C23C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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