发明名称 |
Method for fabricating a capacitor for a semiconductor device |
摘要 |
The present invention discloses a method for fabricating a capacitor for a semiconductor device. The method includes the steps of: forming a lower electrode at the upper portion of a semiconductor substrate where a predetermined structure has been formed; forming an amorphous (Ta2O5)1-x-(TiO2)x film on the lower electrode; performing a thermal treatment on the amorphous (Ta2O5)1-x-(TiO2)x film; and forming an upper electrode on the amorphous (Ta2O5)1-x-(TiO2)x film. A capacitance for the operation of a high integration device is sufficiently obtained by using the (Ta2O5)1-x-(TiO2)x film having a high dielectric constant, thereby fabricating the capacitor suitable for the high integration semiconductor device.
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申请公布号 |
US2001006833(A1) |
申请公布日期 |
2001.07.05 |
申请号 |
US20000742221 |
申请日期 |
2000.12.22 |
申请人 |
LEE KEE JEUNG;KIM DONG JUN |
发明人 |
LEE KEE JEUNG;KIM DONG JUN |
分类号 |
H01L21/28;C23C16/40;C23C16/56;H01L21/02;H01L21/316;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824;H01L21/469;H01L21/31 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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