| 摘要 |
<p>A crystal defect inspecting device and crystal defect detecting method for counting the crystal defects on a silicon wafer and determining the positions of the defects. The method is characterized in that a silicon wafer is heat-treated under a temperature condition in which the natural oxide film is removed and the surface state of the silicon wafer is maintained, specifically in a normal-pressure hydrogen atmosphere at a temperature from 900 ° to 1080 ° and an epitaxial layer is grown under the same condition so as to exhibit a crystal defect of projection and recess on the epitaxial layer, and the crystal defect is detected by means of a light scattering particle inspecting device.</p> |
