| 摘要 |
PURPOSE: A method for manufacturing an isolation region of a semiconductor device is provided to minimize a patterned area of an isolation region and to improve an isolating characteristic of the isolation region. CONSTITUTION: A pad oxide layer(12) and the first nitride layer(13) are formed on a semiconductor substrate(11). A predetermined portion of the first nitride layer and the pad oxide layer is etched to expose the semiconductor substrate where an isolation region is to be formed, by a photolithography process. A predetermined depth of the exposed semiconductor substrate is etched to deposit the second nitride layer(14) on the entire surface by using the remaining first nitride layer and pad oxide layer as a hard mask. An etch-back process is performed to expose the semiconductor substrate. After the exposed semiconductor substrate is wet-etched, an insulating layer(16) is deposited on the entire surface and planarized.
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