METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to decrease contact resistance of a contact layer formed inside a contact hole and to reduce variance of a contact resistance value, by forming a metal spacer composed of a titanium layer and a titanium tungsten layer on the inner wall of the contact hole having a fine size. CONSTITUTION: An interlayer dielectric(5) covering gate electrodes(3) is formed on a semiconductor substrate(1). A predetermined portion of the interlayer dielectric is etched to form a contact hole(6) of a fine width exposing the semiconductor substrate. A spacer of a metal material is formed on the sidewall of the contact hole. A contact layer(11a) is formed in the contact hole where the spacer of the metal material is formed.