METHOD FOR FABRICATING GROUP 111 NITRIDE COMPOUND SEMICONDUCTORS AND GROUP NITRIDE COMPOUND SEMICONDUCTOR DEVICES

摘要

A first group III nitride compound semiconductor layer (31) is etched into islands of dot, stripe, or check pattern so as to form steps. A second group III compound semiconductor layer (32) can be epitaxially grown vertically an d horizontally from the tops of the upper stages of the steps and the sides acting as the nuclei of the growth to fill in the step portions. Any threadi ng dislocation in the group III nitride compound semiconductor layer (31) is suppressed to be propagated into the horizontally epitaxially grown upper portion of the group III nitride compound semiconductor layer (32), and therefore a region where threading dislocations are few can be formed in the filled step portions.