发明名称 ELECTRO-OPTICAL DEVICE HAVING AN ITO LAYER, A SiN LAYER AND AN INTERMEDIATE SILICON OXIDE LAYER
摘要 <p>An electro-optical device such as a fingerprint sensor or an X-ray image sensor has an ITO (indium tin oxide) layer (67) and a SiN layer (64A) near the ITO layer. An intermediate layer (64B) of silicon oxide is provided between the ITO layer and the SiN layer. This intermediate layer prevents reduction of the ITO layer during manufacture.</p>
申请公布号 WO2001048830(A1) 申请公布日期 2001.07.05
申请号 EP2000012542 申请日期 2000.12.11
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