METHOD FOR FORMING A TIO2-X FILM ON A MATERIAL SURFACE BY USING PLASMA IMMERSION ION IMPLANTATION AND THE USE THEREOF

摘要

The present invention relates to a method for forming a TiO2-x film on a material surface by using plasma immersion ion implantation (PIII), and the use thereof. The said method comprises the steps of: providing a workpiece on a support in a vacuum chamber of a plasma immersion ion implantation device under oxygen atmosphere, wherein the oxygen is in plasma form; introducing the plasma of titanium, titanium-tantalum or titanium-niobium into the vacuum chamber in metal arc plasma form; and supplying a negative pulse voltage to the support at 500 to 50,000 Hertz, wherein the negative pulse voltage is about 100 to 10,000 Volt, thus forming a TiO2-x film or a Ta or Nb doped TiO2-x film on the workpeice surface, wherein x is about 0 to 0.35. When the workpiece is used for an artificial organ or an instrument which is implanted in human body and contacts blood, the blood compatibility can be substantially improved.