发明名称 |
Slurry for chemical mechanical polishing |
摘要 |
In chemical mechanical polishing of a substrate comprising a tantalum-containing metal film, a slurry for chemical mechanical polishing comprising a silica polishing grain and an inorganic salt in an amount of 0.01 wt % to 10 wt % both inclusive may be used to prevent dishing and erosion, as well as to achieve an improved polishing rate for tantalum without any damage to tantalum. |
申请公布号 |
US2001006224(A1) |
申请公布日期 |
2001.07.05 |
申请号 |
US20000741408 |
申请日期 |
2000.12.20 |
申请人 |
TSUCHIYA YASUAKI;WAKE TOMOKO;ITAKURA TETSUYUKI;SAKURAI SHIN;AOYAGI KENICHI |
发明人 |
TSUCHIYA YASUAKI;WAKE TOMOKO;ITAKURA TETSUYUKI;SAKURAI SHIN;AOYAGI KENICHI |
分类号 |
B24B37/00;C09G1/02;C09K3/14;C23F3/00;H01L21/304;H01L21/321;H01L21/768;(IPC1-7):C09K5/00 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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