ANTI-ELECTROSTATIC CIRCUIT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: An anti-electrostatic circuit of a semiconductor device is provided to improve the efficiency of electrostatic discharge by adding a transistor to an existing anti-electrostatic circuit. CONSTITUTION: A resistance(R) intermediates between an input pad(10) and an input buffer(20). A field flat diode(D) has a drain connected between the resistance(R) and the input buffer(20) and a gate and a source connected with a grounding stage. The first NPN transistor(NPN1) has a collector connected between the input pad(10) and the resistance(R) and an emitter connected with the grounding stage. The first PNP transistor(PNP1) has a collector connected between the input pad(10) and the resistance(R) and an emitter connected with a power source(Vcc). The second NPN transistor(NPN2) has a collector connected between the input pad(10) and the resistance(R) and an emitter connected with the power source(Vcc).