| 摘要 |
PURPOSE: A method for manufacturing a lower electrode of a capacitor in a high integrated semiconductor memory device is provided to prevent a bridge between lower electrodes by removing selectively a doped polysilicon layer. CONSTITUTION: An interlayer dielectric(30) is formed on a semiconductor substrate(10). A contact plug(54) is formed through a contact hole. The first polysilicon layer(58) is deposited on a whole face of a sacrificial insulating layer. A selective meta-stable polysilicon growth process and a doping process are performed. The second polysilicon layer(60) is deposited on the first polysilicon(58). The second and the first polysilicon layers(60,58) are polished. The sacrificial insulating layer is removed selectively. The first polysilicon layer(58) is removed selectively. A lower electrode is formed by performing the doping process for the first polysilicon layer(58).
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