Method of preparing a compound semiconductor crystal

摘要

There is provided a method of preparing a compound semiconductor crystal, allowing the compound semiconductor crystal to be doped with carbon in high reproducibility. The method includes the steps of sealing carbon oxide gas of a predetermined partial pressure and compound semiconductor material in a gas-impermeable airtight vessel, increasing the temperature of the vessel to melt the compound semiconductor material sealed in the vessel, and decreasing the temperature of vessel to solidify the melted compound semiconductor material to grow a compound semiconductor crystal containing a predetermined amount of carbon. With this method, a compound semiconductor crystal with a carbon concentration of 0.1x1015 cm-3 to 20x1015 cm-3 is also prepared in high reproducibility.