发明名称 |
Production of a storage electrode of a deep trench capacitor comprises forming a doped layer above an exposed substrate which has been structured and then thermally treating |
摘要 |
In the production of a storage electrode of a deep trench capacitor a doped layer is formed above an exposed substrate which has been structured and then thermally treatment is carried out. Production of a storage electrode of a deep trench capacitor comprises: preparing a substrate (200) with a hard mask layer (202) and an insulating layer (204); structuring the hard mask layer and the insulating layer to form a deep trench (206) with side walls (206a); forming an insulating layer in the trench; forming hard material distance spacers in the upper region of the trench above the insulating layer; removing the insulating layer to expose the substrate; forming a doped layer above the exposed substrate; and thermally treating to form a doped region in the substrate.
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申请公布号 |
DE19961085(A1) |
申请公布日期 |
2001.07.05 |
申请号 |
DE19991061085 |
申请日期 |
1999.12.17 |
申请人 |
MOSEL VITELIC INC., HSINCHU;PROMOS TECHNOLOGIES, INC.;SIEMENS AG |
发明人 |
SHIAO, J.S.;YEN, WEN-PING |
分类号 |
H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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