| 摘要 |
PURPOSE: A method for fabricating a liquid crystal display(LCD) of thin film transistor(TFT) is to form a passivation layer using an organic insulating layer, thereby improving yield of the device. CONSTITUTION: A gate electrode(42) is formed on an insulating substrate(41). A gate insulating layer(43), an amorphous silicon layer, a doped amorphous silicon layer(45) and a metal layer for source/drain electrodes are sequentially formed on the insulating substrate. The metal layer, the doped amorphous silicon layer and the amorphous silicon layer are etched to form source/drain electrodes(46a,46b), an ohmic layer and a semiconductor layer sequentially. An organic insulating layer is formed on an entire structure to a thickness of 3 micrometer or more. The organic insulating layer is formed with one of a BCB(benzocyclobutene)-based compound, an acrylic resin-based compound and a polyimide-based compound.
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