摘要 |
<p>A semi conductor device is disclosed that eliminates at least one of the channel/dielectric interfaces along the side walls of an SOI/SOS transistor channel, but does not require the use of a dedicated body tie contact. Because a dedicated body contact is not required, the packing density of the device may be significantly improved over conventional T-gate and H-gate configurations. The present invention may also reduce the overall gate area, which may increase both the speed and overall yield of the device.</p> |