| 摘要 |
PURPOSE: A structure for preventing static electricity of a semiconductor device is provided to easily inspect a portion where pin leakage fail occurs, by connecting transistors of a circuit for preventing static electricity with pads by a plurality of connection units, and by sequentially cutting the plurality of connection units. CONSTITUTION: In an output driving unit, a protection transistor connected a power supply and the ground is composed of a complementary metal-oxide-semiconductor(CMOS) transistor type so that an output terminal is connected to a pad(10). An input buffer unit receives an output signal of the output driving unit through a resistor. A drain of an n-channel metal-oxide-semiconductor(NMOS) transistor(N1,N2) is connected to the input terminal of the input buffer unit, and a gate and a source of the NMOS transistor are connected to the ground. The protection transistor of the output driving unit, the transistor of the input buffer unit and the NMOS transistor are connected to each pad by using connection units(1,2,3,4). The connection units are sequentially cut to inspect a portion where the pin leakage fail occurs.
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