| 摘要 |
A method for forming a gate insulating film for a semiconductor device comprising forming an insulating film of silicon nitride or silicon oxynitride in the active regions of the semiconductor substrate; forming an amorphous TaON insulating film on the insulating film; and crystallizing the amorphous TaON insulating film. Using TaON as the primary gate insulating film provides a high dielectric constant (epsi=20~25), and thus produces a gate insulating film having properties superior to those possible with silicon dioxide gate films and thus more suitable for use in highly integrated semiconductor devices.
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