| 摘要 |
PURPOSE: A method for forming a gate electrode of a semiconductor device for preventing a trouble by a re-oxidation process is provided to protect a shape of a gate electrode by preventing oxidation of a conductive metal layer in a re-oxidation process. CONSTITUTION: A gate oxide layer(21), a doped polysilicon layer(22a), and a conductive metal layer(23A) are formed sequentially on a semiconductor substrate(20). The conductive metal layer(23A) and the doped polysilicon layer(22a) are etched by using a lithography process. An anti-oxide polysilicon layer is formed on the structure. A surface of the conductive metal layer(23A) is changed to a metal silicide layer(23B) by performing a thermal processing. The remaining anti-oxide polysilicon layer is removed. A re-oxidation process is performed.
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