| 摘要 |
PURPOSE: A method for manufacturing a non-volatile ferroelectric memory device is provided to easily perform a manufacturing process by maximizing process margin, and to reduce manufacturing cost by decreasing a number of masks. CONSTITUTION: The first and second active regions are defined in a semiconductor substrate(100). The first and second split word lines(102,102a) crossing the first and second active regions are formed. The first and second source/drain regions are respectively formed in the first and second active regions at both sides of the first and second split word lines. The first plugs(106) connected to the first and second drain regions are connected to the second plugs(107) connected to the first and second source regions through a contact hole. The first electrodes of the first and second ferroelectric capacitors are formed on the second and first split word lines. The first and second ferroelectric layers are formed on the first and second electrodes. The second electrodes of the first and second ferroelectric capacitors have a folded island type regarding the first and second split word lines, and formed on the surface of the first and second ferroelectric layers, respectively. The first and second conductive layers connect the second plugs respectively connected to the first and second source regions with the second electrodes of the first and second ferroelectric capacitors. The first and second bit lines are formed in a direction crossing the first and second split word lines, respectively connected to the first plugs connected to the first and second drain regions.
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