发明名称 Manufacture of field emission element
摘要 In a field emission element manufacture method, a gate electrode having a gate hole and a getter film having a through hole communicating with the gate hole are formed on the surface of a substrate. A sacrificial film is formed over the substrate to form a mold which is used when an emitter electrode is formed, the sacrificial film covering the side walls of the gate hole and through hole and the partial surface of the substrate exposed via the holes. An emitter electrode is formed covering the surface of the mold, and thereafter the gate hole and emitter electrode are exposed to obtain a field emission element. The vacuum degree in a flat panel display can be raised and molecules are prevented from attaching to the surface of the emitter electrode.
申请公布号 US2001006842(A1) 申请公布日期 2001.07.05
申请号 US20010764958 申请日期 2001.01.18
申请人 HATTORI ATSUO 发明人 HATTORI ATSUO
分类号 H01J1/304;H01J7/18;H01J9/02;H01J9/385;H01J9/39;H01J29/94;H01L29/66;(IPC1-7):H01L21/20 主分类号 H01J1/304
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