SEMICONDUCTOR WAFER FOR PREVENTING DAMAGE DUE TO PLASMA CHARGE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor wafer for preventing a damage due to a plasma charge and a method for manufacturing the same are provided to prevent a damage due to a plasma charge by forming a conductive path using a dummy region. CONSTITUTION: A moat pattern(11) is formed on a dummy region of a semiconductor substrate(10). A multitude of metal line pattern layer(40) is formed on an upper portion of the moat pattern. An interlayer dielectric is formed between a surface of the semiconductor substrate(10) and the metal line pattern layer(40) or between the metal line pattern layers(40). A contact hole is formed at the interlayer dielectric. A plug(30) connects the surface of the semiconductor substrate(10) with the metal line pattern layer(40) or the metal line pattern layer(40) with the metal line pattern layer(40) through the contact hole.