发明名称 |
SEMICONDUCTOR DEVICE WITH IMPROVED PLATE ELECTRODE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: A semiconductor device with an improved plate electrode and a method for manufacturing the same are provided to improve a structure of a plate electrode by dividing the plate electrode having a structure of unit cell array into line units of unit cell. CONSTITUTION: A substrate active line(306), namely a plate electrode line is formed to the same direction as a bit line. Each active line(306) is insulated electrically to each other by a trench isolation layer(304). A buried oxide layer(302) is formed on a semiconductor substrate(300). Unit cells are formed on the buried oxide layer(302) and the substrate active line(306). The active line(306) for forming a plate electrode is extended to a direction of the bit line.
|
申请公布号 |
KR20010057668(A) |
申请公布日期 |
2001.07.05 |
申请号 |
KR19990061041 |
申请日期 |
1999.12.23 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
LEE, CHANG GWON |
分类号 |
H01L29/41;(IPC1-7):H01L29/41 |
主分类号 |
H01L29/41 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|