发明名称 SEMICONDUCTOR DEVICE WITH IMPROVED PLATE ELECTRODE AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A semiconductor device with an improved plate electrode and a method for manufacturing the same are provided to improve a structure of a plate electrode by dividing the plate electrode having a structure of unit cell array into line units of unit cell. CONSTITUTION: A substrate active line(306), namely a plate electrode line is formed to the same direction as a bit line. Each active line(306) is insulated electrically to each other by a trench isolation layer(304). A buried oxide layer(302) is formed on a semiconductor substrate(300). Unit cells are formed on the buried oxide layer(302) and the substrate active line(306). The active line(306) for forming a plate electrode is extended to a direction of the bit line.
申请公布号 KR20010057668(A) 申请公布日期 2001.07.05
申请号 KR19990061041 申请日期 1999.12.23
申请人 DONGBU ELECTRONICS CO., LTD. 发明人 LEE, CHANG GWON
分类号 H01L29/41;(IPC1-7):H01L29/41 主分类号 H01L29/41
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