| 摘要 |
PURPOSE: A method for forming a capacitor of a DRAM device is provided to prevent photoresist scum from staying in a space between storage electrodes due to irregular surfaces. CONSTITUTION: In the method, an interlayer dielectric layer(13) having storage node contact holes is formed on a semiconductor substrate(11). Next, the first polysilicon layer(14) for the storage electrodes is deposited over the interlayer dielectric layer(13) to fill the contact holes. The first polysilicon layer(14) is then covered with a core oxide layer(15) and patterned therewith to form storage structures. Next, the second polysilicon layer(16) for the storage electrodes is deposited on the interlayer dielectric layer(13) and the storage structures(14,15). Thereafter, an organic anti-reflective layer(17a) is formed over the second polysilicon layer(16) to fill the space between the adjacent storage structures(14,15), and then cured and developed to partially remain in the space. Next, a photoresist layer(18) is coated on a resultant structure and then exposed only in a cell region. Then, the exposed photoresist layer(18) and the remaining anti-reflective layer(17a) are removed by development. Here the photoresist layer(18) is completely removed without staying the photoresist scum since the anti-reflective layer(17a) moderates the surfaces.
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