<p>There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other. <IMAGE></p>
申请公布号
EP1113489(A2)
申请公布日期
2001.07.04
申请号
EP20000128421
申请日期
2000.12.28
申请人
CANON SALES CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD.