| 摘要 |
PURPOSE: A method for forming patterns in semiconductor devices is provided to make uniform the cross section of a positive photosensitive film when the positive photosensitive film is flowed and reduce variations in the diameter of the pattern depending on variations in the temperature. CONSTITUTION: A method for forming patterns in semiconductor devices covers a positive photosensitive film(22) on a semiconductor substrate(21). Then, the positive photosensitive film(22) is exposed using a mask. The exposed positive photosensitive film(22) is developed/hardened to form a pattern of a hole shape. A photosensitive film is then covered on the entire structure. The covered photosensitive film is developed to remove it so that a portion of the photosensitive film can be left at the hole pattern on the positive photosensitive film(22). The positive photosensitive film(22) is flowed at high temperature to reduce the size of the hole pattern. The remaining photosensitive film is completely removed and the semiconductor substrate(21) is then etched using the flowed positive photosensitive film(22).
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