发明名称 RESIDUAL GAS EXHAUST SYSTEM OF LOW PRESSURE CHEMICAL VAPOR DEPOSITION CHAMBER
摘要 PURPOSE: An improved residual gas exhaust system of a low pressure chemical vapor deposition chamber is provided to prevent a pressure sensor from being degraded by particles produced during exhaust of a residual gas. CONSTITUTION: The exhaust system includes a reaction chamber(10) admitting a boat(20) containing wafers(22), an exhaust line(30) used as an exhaust path of the residual gas in the reaction chamber(10), the first pressure sensor(42) detecting an exhaust pressure of the residual gas, the second pressure sensor(44) monitoring operation of the first pressure sensor(42), a pressure controller(50) receiving pressure values from the sensors(42,44) and thereby controlling the exhaust pressure, the first flow regulator(70) supplying a nitrogen gas to the exhaust line(30) to compensate for an insufficient exhaust pressure, and a vacuum pump(80) compulsively exhausting the residual gas. In particular, the exhaust system further includes the second flow regulator(90) which supplies a nitrogen or inert gas or air in small amount to prevent the first pressure sensor(42) from being directly exposed to the exhaust gas.
申请公布号 KR20010056959(A) 申请公布日期 2001.07.04
申请号 KR19990058659 申请日期 1999.12.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KOOG, JEONG HO;RYU, GYU BOK
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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