| 摘要 |
PURPOSE: A deposition apparatus for a semiconductor thin film is provided to prevent defects produced in the thin film by employing an ozone gas as an oxidizing gas. CONSTITUTION: The deposition apparatus includes at least one reaction chamber(100) configured with a uniform pressure, a gas supply unit(400) for supplying a reaction gas or an inert gas to the reaction chamber(100), and an exhaust unit(200) for exhausting gases in the reaction chamber(100). Particularly, the deposition apparatus further includes an ozone supply unit(300), which generates the ozone gas to be reacted with the reaction gas, and then supplies the ozone gas to the reaction chamber(100). The ozone supply unit(300) has an ozone generator(310) for producing the ozone gas, a main valve(320) for regulating the flow of the ozone gas, at least one ozone transfer part(330) for guiding the flow of the ozone gas to the reaction chamber(100), and an excess ozone removal part(340) for removing the ozone gas excessively produced and thereby maintaining the regular flow of the ozone gas in the ozone transfer part(330).
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