| 摘要 |
PURPOSE: A static random access memory(SRAM) cell structure is provided to realize a reduction in cell area, an improvement in operating speed, and acquisition of a process margin. CONSTITUTION: The SRAM cell structure includes an active region(21) on which a source/drain is formed to be used as a power voltage supply line and a ground voltage line, a gate line(22) used as an interconnection line between gates, the first metal line(24) used as an interconnection line between parts of the source and drain through the first contact(23) and also used as a bit line and a bit bar line connected to the other source and drain through the first contact(23), and the second metal line(26) used as an interconnection line between the first metal line(25) and the gate line(22) through the second contact(25) and also used as a word line connected to the gate line(22) through the second contact(25).
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