| 摘要 |
PURPOSE: A method for manufacturing semiconductor memory is provided to ensure a bitline plug to be positioned on the top of a gate by smoothing a polycrystalline a silicon without exposing the gate. CONSTITUTION: A process forms a gate of a cell transistor on a substrate(1). The process deposits a polycrystalline silicon(3) on the top of the structure and makes the deposited polycrystalline silicon(3) smoothed so that the gate of the cell transistor may not be exposed. The process deposits a dielectric film on the smoothed polycrystalline silicon (3) and forms a dielectric film pattern located on a common source of the cell transistor and on an upper part of the gate positioned on the both sides of the cell transistor of the common source by patterning the dielectric film. The process forms a bitline plug located on the top of the both sides gate of the source by utilizing the dielectric pattern as an etch mask. The bitline plug is connected to a source of the cell transistor by patterning the polycrystalline silicon(3).
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