发明名称 |
ALLOY ELECTRODE IN CAPACITOR AND METHOD FOR FORMING THE SAME |
摘要 |
PURPOSE: An alloy electrode in a capacitor is provided to prevent oxidization of a barrier layer and degradation of a dielectric thin film using an alloy electrode without using metal and conductive oxide. CONSTITUTION: An alloy electrode in a capacitor includes a lower alloy electrode layer(22) consisting of a PtPu alloy layer on a semiconductor substrate(21). A surface oxide layer(23) functions as a barrier layer and consists of a RuO2 layer on the lower alloy electrode layer(22). A BST dielectric thin film layer(24) is formed on the surface oxide layer(23). An upper alloy electrode layer(25) consists of a PtRu alloy layer formed on the dielectric thin film layer(24).
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申请公布号 |
KR20010056098(A) |
申请公布日期 |
2001.07.04 |
申请号 |
KR19990057520 |
申请日期 |
1999.12.14 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
OH, GI YEONG;YOON, JONG HO |
分类号 |
H01L21/24;(IPC1-7):H01L21/24 |
主分类号 |
H01L21/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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