发明名称 ALLOY ELECTRODE IN CAPACITOR AND METHOD FOR FORMING THE SAME
摘要 PURPOSE: An alloy electrode in a capacitor is provided to prevent oxidization of a barrier layer and degradation of a dielectric thin film using an alloy electrode without using metal and conductive oxide. CONSTITUTION: An alloy electrode in a capacitor includes a lower alloy electrode layer(22) consisting of a PtPu alloy layer on a semiconductor substrate(21). A surface oxide layer(23) functions as a barrier layer and consists of a RuO2 layer on the lower alloy electrode layer(22). A BST dielectric thin film layer(24) is formed on the surface oxide layer(23). An upper alloy electrode layer(25) consists of a PtRu alloy layer formed on the dielectric thin film layer(24).
申请公布号 KR20010056098(A) 申请公布日期 2001.07.04
申请号 KR19990057520 申请日期 1999.12.14
申请人 HYNIX SEMICONDUCTOR INC. 发明人 OH, GI YEONG;YOON, JONG HO
分类号 H01L21/24;(IPC1-7):H01L21/24 主分类号 H01L21/24
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