CURRENT INTERCEPTION STRUCTURE USING OXIDATION LAYER AND MANUFACTURING METHOD FOR QUANTUM DOT LASER DIODE THEREOF

摘要

PURPOSE: A manufacturing method for quantum dot laser diode is provided to make manufacturing process simple by forming at the same time current interception structure and activity area by using the difference with a lattice structure of an epitaxial layer formed on upper part. CONSTITUTION: The first stage of a current interception structure forms the first cladding layer(22) of the first challenge type on substrates of the challenge type. The second stage makes a quantum dot glow up on the upper part of the first cladding layer(22). The third stage forms current interception layer to oxidize the first cladding layer(22), using the quantum dot activity layer(23) for oxidation mask. The firth stage forms the second cladding layer(25) of the second challenge type on the quantum dot activity layer(23) including the current interception layer. The fifth stage forms cap layer of challenge type on the second cladding layer(25) upper part. The first stage of a manufacturing method of quantum dot laser diode forms the first cladding layer(22) on the semiconductor board of first challenge type. The second stage forms voluntary the quantum dot activity layer of 3 dimension island type. The third stage forms current interception layer by oxidizing the first cladding layer with using the quantum dot activity layer(23) as the oxidation mask. The firth stage forms the second cladding layer(25) of the second challenge type with a lot of a lattice defect on upper part of the current interception layer.