METHOD FOR MANUFACTURING MOS TRANSISTOR OF LDD STRUCTURE

摘要

PURPOSE: A method for manufacturing MOS transistor of LDD structure is provided to improve the electric characteristics of a transistor by making uniform the thickness of an oxide layer remaining on a substrate of an around source/drain area even when a wafer size is large and improving a doping profile in an ion implantation of a source/drain. CONSTITUTION: A process deposits a gate oxide layer(14) on an active area of a substrate(10), to make a gate electrode(16) formed by a conductive material. The process forms an oxide thin film on that forming the gate electronic(16). The process forms an LDD(Lightly Doped Drain) area(20) implanting on a low concentration of conductive impurities different to that of from the substrate(10) within the substrate(16) of an activated area separated to each other, by making the gate electrode(16) of a mask , and placing the gate electrode(16) therebetween. The process forms a spacer(22) by using a material that a selecting etch rate is different to the oxide material on the sidewall of the gate electrode(16). The process forms a source/drain area implanted with a high concentration of the conductive impurities different to that of the substrate(16) within the substrate(16) by making the gate electrode(16) and the spacer(22) of a mask.