| 摘要 |
PURPOSE: A contact hole forming method for a semiconductor apparatus is provided to maintain a contact resistance and to improve a confidence of element by preventing a damage of the upper layer wiring. CONSTITUTION: HLD(high temperature low pressure dielectric) or BPSG(boron phosphor silicate glass), the first insulating layer(21), is formed at the surface of a silicon substrate(20) by means of chemistry gas state deposition. The first wiring(22), such as tungsten, tungsten-silicide, is formed on the surface of the first insulating layer(21). The second insulating layer(23), IMD(inter metal dielectric), is formed at the surface of the first insulating layer(21) including the first wiring(22). The third insulating layer(25), IMD, is formed at the surface of the second insulating layer(23). A nitration membrane(26), mask layer, deposits on the upper surface of the third insulating layer(25). The nitration membrane(26) on the first wiring(22) and the second wring(24) is exposed the outside.
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